NY Creates announced its participation in a new industry collaboration focused on developing 12-inch masks for high numerical aperture extreme ultraviolet (high NA EUV) lithography. The Albany-based state agency said it will leverage the infrastructure at its Albany NanoTech Complex to serve as a neutral hub for this effort, which aims to strengthen the ecosystem required for next-generation chip manufacturing.
What it means
The initiative addresses technical limitations in current high NA EUV systems. ASML’s equipment, capable of printing components at sub-1nm nodes, uses standard 6-by-6-inch masks. Because high NA optics reduce the area printable on a wafer in a single exposure, manufacturers must stitch multiple exposures together to create larger chips. Industry leaders are exploring a wider 6-by-12-inch mask format to minimize stitching and improve production efficiency.
Transitioning to this larger format requires coordinated advances across several areas, including mask blanks, writing and inspection equipment, pellicles, handling systems, and manufacturing infrastructure. NY Creates stated that the successful adoption of high NA EUV lithography depends on collaboration across the global semiconductor ecosystem. The agency said it is contributing its convening power and expertise to accelerate progress with partners including ASML and TSMC.
Key facts
- NY Creates announced participation in the 12-inch mask industry initiative.
- The collaboration aims to strengthen the high NA EUV lithography ecosystem.
- ASML provides High NA EUV equipment for sub-1nm node printing.
- Standard EUV masks measure approximately 6-by-6-inches.
- Industry leaders are exploring a 6-by-12-inch mask format to reduce stitching.
- The transition requires advances in mask blanks, writing/inspection tools, pellicles, and handling systems.
- The Albany NanoTech Complex will serve as a neutral hub for collaborative infrastructure.
Source: Semiconductor Digest